Dr. Asaf Albo


I am a researcher in the fields of materials & devices and just started to work on my postdoc study, dealing with the development of terahertz quantum cascade lasers and their applications, with Prof. Qing Hu at the RLE center at MIT.
I have worked for about four years at the industry in a semiconductor devices company as an R&D Senior Physicist. My research there was focused on experimental studies, optoelectronic characterization, and advanced device physics simulations of antimonide-based III-V compound semiconductor materials and photodetector device structures synthesized by molecular beam epitaxy (MBE).

My PhD research was conducted at the Department of Electrical Engineering, the Technion. The research was carried out under the supervision of Professor Gad Bahir from the EE Department and Professor Dan Fekete from the Physics Department. In my research I have focused on the development of growth (MOCVD) as well as the characterization and fabrication of dilute-nitride-based devices.

The main results of my research have been published in major peer-reviewed journals. I recently have written eight publications and hold four patents and have given many conference presentations from my research work at the Technion.
In my graduate studies and in my work at the semiconductor industry, I acquired a wide background in materials science, crystal growth, semiconductor quantum structures, device physics, IR photodetectors, and imaging.

In the current stage of my career, I am interested in applying my knowledge to study quantum structure-based devices for terahertz applications, specifically THz-QCLs. During my post-doctoral studies I intend to gain the experience, technological, technical, and theoretical knowledge in order to become an independent researcher in the field of THz-QCLs and their applications. I hope this will provide me with an opportunity to become one of the distinctive researchers in this field and gaining academic position in one of the world leading institutes, preferably within the Technion.

Three selected publications of mine are:

  • “Electronic bound states in the continuum above (Ga,In)(As,N)/(Al,Ga)As quantum wells”, Asaf Albo, Dan Fekete, and Gad Bahir, Phys. Rev. B. 85, 115307, 2012.
  • “Improved hole confinement in GaInAsN-GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers”, Asaf Albo, Gad Bahir, and Dan Fekete, J. Appl. Phys. 108, 093116, 2010.
  • “Utilizing interface adsorption of nitrogen for the growth of GaInAsN by metal organic chemical vapor deposition for NIR applications”, Asaf Albo, Catherine Cytermann, Gad Bahir, and Dan Fekete, Appl. Phys. Lett. 96, 141102, 2010.