Dr. Alon Vardi


I was born in Kfar Saba. Israel. I received my undergraduate degree in Electrical Engineering and Science Education from Ariel University, in Ariel, Israel. My Master’s and Ph.D degrees in Electrical Engineering are from the Technion – Israel Institute of Technology.

My dissertation at the Technion with Prof. Gad Bahir was about development of photodetectors for telecommunication wavelengths. These detectors were made of III-Nitride semiconductors which are normally transparent but with carful design become active at infrared wavelengths. The use of such materials for optical communication applications is desired because of their ultrafast carrier’s relaxation.

After graduation, I worked for two years at TowerJazz Semiconductor in Migdal Ha’emek, Israel, developing integrated power electronic devices. The integration of logic and high power circuitry on the same die is important for application such as DC-DC converters, power amplifiers and LED drivers.

At MIT, I’m working with Prof. Jesus del Alamo on III-V CMOS. This project aims to explore the building blocks of future 10nm technology. One of the leading candidates for this technology is the III-V platform. In this platform, the active area is made of different III-V semiconductors alloy on Si substrate designed to outperform plain Si, therefore allowing further reduction of transistor dimensions and power dissipation. There are many issues to overcome before III-V CMOS can be accepted as a valid alternative for standard CMOS. The difficulties span from device properties, such as contact resistance, to proper integration of P- and N- MOS transistors on the same substrate.